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thin-film epitaxy

См. также в других словарях:

  • Thin-film deposition — is any technique for depositing a thin film of material onto a substrate or onto previously deposited layers. Thin is a relative term, but most deposition techniques allow layer thickness to be controlled within a few tens of nanometers, and some …   Wikipedia

  • Thin film — A thin film is a layer of material ranging from fractions of a nanometer (monolayer) to several micrometers in thickness. Electronic semiconductor devices and optical coatings are the main applications benefiting from thin film construction. A… …   Wikipedia

  • Epitaxy — refers to the method of depositing a monocrystalline film on a monocrystalline substrate. The deposited film is denoted as epitaxial film or epitaxial layer. The term epitaxy comes from a Greek root ( epi above and taxis in ordered manner ) which …   Wikipedia

  • epitaxy — /ep i tak see/, n., pl. epitaxies. Crystall. epitaxis. * * * ▪ crystallography       the process of growing a crystal of a particular orientation on top of another crystal, where the orientation is determined by the underlying crystal. The… …   Universalium

  • Chemical beam epitaxy — (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular… …   Wikipedia

  • Molecular beam epitaxy — A simple sketch showing the main components and rough layout and concept of the main chamber in a Molecular Beam Epitaxy system Molecular beam epitaxy (MBE) is one of several methods of depositing single crystals. It was invented in the late… …   Wikipedia

  • Metalorganic vapour phase epitaxy — (MOVPE), also known as organometallic vapour phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method of epitaxial growth of materials, especially compound semiconductors from the surface… …   Wikipedia

  • Space Vacuum Epitaxy Center — is the 8,000 square feet of laboratory space in 3 buildings on the University of Houston campus. The SVEC facilities contains equipment dedicated to thin film deposition, processing and characterization of III V compound semiconductor, high… …   Wikipedia

  • Atomic layer epitaxy — (ALE), now more generally called Atomic Layer Deposition, is a specialized form of epitaxy that typically deposit alternating monolayers of two elements onto a substrate. The crystal lattice structure achieved is thin, uniform, and aligned with… …   Wikipedia

  • Molecular-beam epitaxy — (MBE), is one of several methods of depositing single crystals. It was invented in the late 1960s at Bell Telephone Laboratories by J. R. Arthur and Alfred Y. Cho.MethodMolecular beam epitaxy takes place in high vacuum or ultra high vacuum (10−8… …   Wikipedia

  • molecular beam epitaxy — noun a technique, used in the production of thin films of ultra pure semiconductors, that grows the film by condensation of evaporated atoms …   Wiktionary

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